Renesas Electronics Introduces 16- and 32-Megabit Advanced Low Power SRAMs with Over 500 Times the Resistance to Soft Errors Compared to Full CMOS Memory Cells
Düsseldorf, July 22, 2015 – Renesas Electronics, a premier supplier of advanced semiconductor solutions, today announced the release of two new series of Advanced Low Power SRAM (Advanced LP SRAM), the leading type of low-power-consumption SRAM, designed to provide enhanced reliability and longer backup battery life for applications such as factory automation (FA), industrial equipment, and the smart grid. Fabricated using the 110-nanometer (nm) process, the new RMLV1616A Series of 16-megabit (Mb) devices and the RMWV3216A Series of 32 Mb devices feature an innovative memory cell technology that dramatically improves reliability … Read More → "Renesas Electronics Introduces 16- and 32-Megabit Advanced Low Power SRAMs with Over 500 Times the Resistance to Soft Errors Compared to Full CMOS Memory Cells"