September 14, 2021, Princeton, New Jersey: UnitedSiC, a leading manufacturer of silicon carbide (SiC) power semiconductors, has responded to the power designer’s requests for higher-performance, higher-efficient SiC FETs with the announcement of the industry’s best 750V, 6mohm device. At a RDS(on) value of less than half the nearest SiC MOSFET competitor, the new 6mohm device also provides a robust short-circuit withstand time rating of 5s. Today’s announcement includes 9 new device/package options in the 750V SiC FET series, rated at 6, 9, 11, 23, 33, and 44mohms. All devices are available in the TO-247-4L package while the 18, 23, 33, 44, and 60mohm devices also come in the TO-247-3L. Complemented by the already available 18 and 60mohm devices, this 750V expanded series provides designers with more device options, enabling more design flexibility to achieve an optimum cost/efficiency trade-off while maintaining generous design margins and circuit robustness.
Gen 4 SiC FETs from UnitedSiC are a ‘cascode’ of a SiC JFET and a co-packaged silicon MOSFET. These together provide the full advantages of wide band-gap technology – high speed and low losses with high temperature operation, while retaining an easy, stable, and robust gate drive with integral ESD protection. The advantages are quantified by Figures of Merit (FoMs) such as RDS(on) x A, a measure of conduction losses per unit die area. Gen 4 SiC FETs achieve the lowest values in the market at both high and low die temperatures. FoM RDS(on) x EOSS/QOSS is important in hard-switching applications and is half the nearest competitor value. FoM RDS(on) x COSS(tr) is critical in soft-switching applications and UnitedSiC device values are around 30% less than competitor parts, rated at 650V compared with UnitedSiC’s at 750V. For hard switching applications, the integral body diode of SiC FETs is superior in recovery speed and forward voltage drop to competing Si MOSFET or SiC MOSFET technologies. Other advantages incorporated into the Gen 4 technology are reduced thermal resistance from die to case by advanced wafer thinning techniques and silver-sinter die-attach. These features enable maximum power output for low die temperature rise in demanding applications.
With their latest improvements in switching efficiency and on-resistance, the new UnitedSiC SiC FETs are ideal for challenging, emerging applications. These include traction drives and on- and off-board chargers in electric vehicles and all stages of uni- and bi-directional power conversion in renewable energy inverters, power factor correction, telecoms converters and AC/DC or DC/DC power conversion generally. Established applications also benefit from use of the devices for an easy boost in efficiency with their backwards compatibility with Si MOSFET and IGBT gate drives and established TO-247 packaging.
As Chris Dries, President and CEO of UnitedSiC states: “The UnitedSiC Gen 4 SiC FETs are unquestionably the performance leaders within competing technologies and set a new benchmark in wide bandgap switch technology. The new range additions now provide further options for all performance and budget specifications, and a wider range of applications.”
Pricing (1000-up, FOB USA) for the new 750V Gen 4 SiC FETs range from $4.15 for the UJ4C075044K3S, to $23.46 for the
UJ4SC075006K4S. All devices are available from authorized distributors.
UnitedSiC develops innovative silicon carbide FET and diode power semiconductors that deliver the industry’s best SiC efficiency and performance for electric vehicle (EV) chargers, DC-DC converters and traction drives, as well as telecom/server power supplies variable speed motor drives and solar PV inverters.