CEA-Leti Scientists Demonstrate CMOS Device Fabrication at 500°C, Paving the Way to High-Performance 3D Monolithic CMOS Integration
GRENOBLE, France – June 22, 2020 – In an FDSOI CMOS processing breakthrough, CEA-Leti scientists have pushed fabrication thermal-process boundaries down to 500°C for CMOS integration, while showing strong performance gains especially in P-type metal-oxide-semiconductor (PMOS) logic devices.
The 500°C threshold is important because in 3D monolithic technologies (also called 3D sequential), fabricating the upper-level transistors at higher temperatures than that can damage the metal interconnects and the silicide of the bottom-level transistors. Using CEA-Leti’s CoolCubeTM low-temperature process for top-level devices prevents deterioration of bottom-level transistors.
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