Hasselt, Belgium, August 29, 2018 — EpiGaN, a leading European
supplier of GaN (Gallium Nitride) technology solutions for power
switching, RF (radio frequency) and sensor applications, will exhibit
and highlight its latest GaN epiwafer developments tailored to 5G
applications at the Semicon Taiwan show in Taipeh (Sept 5-7), and at the
European Microwave Week in Madrid/Spain (EuMW, Sept 23-28).
EpiGaN, headquartered in Hasselt/Belgium, is a global supplier of
GaN-on-Si and GaN-on-SiC product solutions for next-generation
semiconductor technology devices. GaN enables smaller, lighter and
higher-performance systems with added functionality for power conversion
and sensor applications. Furthermore, GaN is being readied to enable key
features of new-standard 5G cellular wireless networks. These future
communication systems require exceptionally high-speed connections for
multimedia streaming, virtual reality, M2M, or autonomous driving.
EpiGaN has taken up the 5G challenge and released large-diameter
versions of its HVRF (High Voltage Radio Frequency) GaN-on-Si, as well
as GaN-on-SiC wafer product families. Customers can choose from various
optimized top structures to best serve their specific RF device needs –
AlGaN, AlN or InAlN barriers combined with GaN or in-situ SiN caps – on
Si substrates up to 200mm, and SiC up to 150mm diameter. EpiGaN’s HVRF
products enable excellent dynamic behavior, highest power densities at
mmW frequencies and lowest RF losses (<0.8dB/mm up to 110GHz).
For ultimate RF performance in the 30- and 40-GHz millimeter wave bands
assigned to 5G EpiGaN has developed HEMT heterostructures featuring
ultra-thin AlN barrier layers in combination with an in-situ SiN capping
layer. These structures allow locating the transistor’s gate very close
to the densely populated channel, thus maximizing the electrostatic
coupling between the two. This results in a far superior RF transistor
characteristics as needed for 5G MMIC developments. HEMT structures with
lattice-matched InAlN barriers exhibit sheet resistivities below 250
Ohm/sq and enable highest transistor current densities.
“We are noticing an increasing demand in the market for our RF GaN
product solutions optimized for 5G systems,” says EpiGaN co-founder and
CEO Dr Marianne Germain. “EpiGaN is proud to offer an exceptionally
broad portfolio of RF GaN epiwafer products that enables our global
customer base to develop differentiated 5G cellular network solutions
with industry-leading performance.“
EpiGaN will exhibit and showcase its latest GaN epiwafer solutions for
power switching, RF power and sensor applications together with its
local agent APEC at the Semicon Taiwan show (booth J2554) from Sept 5-7,
and at the European Microwave Show (booth 354) from Sept 23-28.
About EpiGaN
Founded in 2010 EpiGaN provides innovative GaN technology solutions to
its global customer base. From its European headquarters and modern
production site in Hasselt/Belgium the company offers early access to
leading-edge GaN/Si and GaN/SiC epiwafer technology for next-generation
power switching, RF power, and advanced sensor solutions. EpiGaN’s GaN
technology is a key enabler for device innovation in consumer power
supplies, electric vehicles, wireless charging and RF power systems for
next-generation cellular infrastructures – 5G, IoT (Internet of Things),
and smart sensor systems. The product spectrum ranges from
application-specific standard epi-wafers of up to 200mm diameter to
customized products utilizing the company’s differentiating technology
of AlN barrier and in-situ SiN passivation layers.
www.epigan.com
