GOLETA, Calif.—October 3, 2017—Transphorm Inc., the leader in the design and manufacturing of JEDEC and AEC-Q101 qualified 650V gallium nitride (GaN) semiconductors, announced today the latest resources produced by its Silicon Valley Center of Excellence. The Center is responsible for educating and supporting customers developing with high-voltage (HV) GaN. Application design engineers can access tools, app notes, SPICE models and more via the Center’s Design Resources library. For questions regarding custom designs or system components selection, Transphorm experts can be reached by completing a Design Support Request Form.

Evaluation Kits
Transphorm designs, developments, and provides evaluation kits built on various system topologies with the company’s qualified GaN FETs. These kits offer engineers the opportunity to learn how HV GaN will perform in different designs commonly used in data center and industrial power supplies, automotive, photovoltaic inverter and servo motor applications. The following kits are currently available:

Additional kits are slated for release in the coming months offering varying power ratings for the above-listed topologies. Availability of these kits can be tracked in the Design Resources library. The kits will also be announced via Transphorm’s Twitter feed #TPHTool once released.

Design Guides
Transphorm’s HV GaN experts continue to identify critical areas of interest to application design engineers working on data centers, automotive, broad industrial and other applications. Design Guides are available to help such engineers leverage the inherent benefits GaN offers versus incumbent technologies: higher power density, faster switching speeds, reduced system weight and lower cost of the overall system. Highlighted Design Guides include:

• Multi-pulse Testing for GaN Layout Verification: A tutorial on verifying the power train of a half- or full-bridge system under high voltage and high current operating conditions; checks for parasitic oscillation at the switching edges.
• Ultrafast Overcurrent Breaker Circuit for Prototyping: Explanation of a simple and fast resettable electronic circuit breaker that helps protect GaN FETs and reduces collateral damage from over an overcurrent condition caused by a system development malfunction.
• LLC Resonant Tank Design for 3.3kW Electric Vehicle On-board Charger with Wide-range Output Voltage: Provides engineers familiar with LLC design and operation a starting point for resonant tank values. Also includes methods for calculating transformer ferrite and high-frequency copper losses.

Application Notes
For engineers working with Transphorm’s GaN FETs, application notes are available providing educational analysis and technical solutions to system designs. Recently published Application Notes include:

• GaN FETs in Parallel Using Drain Ferrite Beads and RC Snubbers for High-power Applications: Details a solution for paralleling GaN FETs in hard-switching bridge power converter applications.
• Drain Voltage and Avalanche Ratings for GaN FETs: Compares a Silicon MOSFET’s avalanche rating to a Transphorm GaN FET’s transient drain-to-source rating (V_TDS).

Welcome to the GaN Revolution!
Transphorm is a global semiconductor company, leading the GaN Revolution with the highest performance, highest reliability GaN devices for high voltage power conversion applications. To ensure this, Transphorm deploys its unique vertically-integrated business approach that leverages the industry’s most experienced GaN engineering team at every development stage: design, fabrication, device and application support. This approach, backed by one of the industry’s largest IP portfolios with over 600 patents, has yielded the industry’s only JEDEC- and AEC-Q101-qualified GaN FETs. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99 percent efficiency, 40 percent more power density and 20 percent lower system cost. Join the revolution at transphormusa.com and follow us @transphormusa.