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Qorvo® Delivers 5.4 mΩ 750V SiC FETs in TOLL Package for High Power Applications

GREENSBORO, NC – March 20, 2023 – Qorvo® (Nasdaq: QRVO), a leading global provider of connectivity and power solutions, will showcase a new surface-mount TO-leadless (TOLL) package for its high-performance, 5.4 milliohm (mΩ) 750V SiC FETs. This is the first product in a family of 750V SiC FETs that will be released in the TOLL package with on-resistance ranging from 5.4 mΩ to 60 mΩ. These devices are ideal for use in space-constrained applications such as AC/DC power supplies ranging from several 100s of watts to multiple kilowatts, as well as solid-state relays and circuit breakers up to 100A.

In the 600/750V class of power FETs, Qorvo Gen 4 SiC FETs offer unmatched performance across the main figures of merit for on-resistance and output capacitance. Additionally, in the TOLL package, at 5.4 mΩ the devices have 4-10x lower on-resistance than competing best-in-class Si MOSFETs, SiC MOSFETs and GaN transistors. The 750V rating of the SiC FETs is also 100-150 volts higher than the alternative technologies, providing a significantly enhanced design margin for managing voltage transients.

Anup Bhalla, chief engineer for Qorvo’s Power Devices business, said, “The launch of our 5.4 mΩ Gen4 SiC FETs in TOLL packaging is an important step in our goal of providing designers with the industry’s best performance and multiple device options. Customers working on industrial applications in particular need this combination of flexibility and cost-efficient power design.”

The TOLL package is 30% smaller in footprint and at 2.3 mm half the height of comparable alternative D2PAK surface-mount offerings. Despite the size reduction, advanced manufacturing techniques achieve an industry-leading 0.1°C/W thermal resistance from junction to case. The DC current rating is 120A up to case temperatures of 144°C, while the pulsed current rating is 588A up to 0.5 millisecond. Combined with the ultra-low on-resistance and excellent transient thermal behavior, this yields an ‘I2t’ rating around 8x better than a Si MOSFET in the same package, aiding robustness and immunity to transient overloads, while also simplifying the design. A Kelvin source connection is also provided in the TOLL package for reliable high-speed switching.

These Gen4 SiC FETs leverage Qorvo’s unique cascode circuit configuration, in which a SiC JFET is co-packaged with a Si MOSFET to produce a device with all of the efficiency advantages of wide bandgap switch technology and the simpler gate drive of Silicon MOSFETs.

The Qorvo TOLL-packaged, Gen4 5.4 mΩ SiC FET is included in Qorvo’s FET-JetTM free-to-use online calculator, which allows instant evaluation of efficiency, component losses and junction temperature rise for parts used in a wide variety of AC/DC and isolated/non-isolated DC/DC converter topologies. Single and paralleled devices may be compared under user-specified heat-sinking conditions to determine an optimal solution.

For more information about Qorvo’s advanced solutions for power applications, please visit https://www.qorvo.com/innovation/power-solutions.

These products will be highlighted at the Applied Power Electronics Conference (APEC) from March 19-23 in Orlando, Florida at Qorvo booth 632. More information about Qorvo’s innovative technologies on display at APEC and links to schedule meetings and interviews at the show can be found at https://www.qorvo.com/newsroom/trade-shows/apec-2023.

About Qorvo
Qorvo (Nasdaq: QRVO) supplies innovative semiconductor solutions that make a better world possible. We combine product and technology leadership, systems-level expertise and global manufacturing scale to quickly solve our customers’ most complex technical challenges. Qorvo serves diverse high-growth segments of large global markets, including consumer electronics, smart home/IoT, automotive, EVs, battery-powered appliances, network infrastructure, healthcare and aerospace/defense. Visit www.qorvo.com to learn how our diverse and innovative team is helping connect, protect and power our planet.

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