Renesas Electronics Announces Low-Loss Silicon Carbide (SiC) Power Devices Integrating Power Conversion Circuit in Single Chip
TOKYO, Japan, January 17, 2012—Renesas Electronics Corporation (TSE: 6723), a premier provider of advanced semiconductor solutions, today announced the development of a Schottky barrier diode (SBD), the RJS6005TDPP, employing silicon carbide (SiC, Note 1), a material considered to have great potential for use in power semiconductor devices. The new SiC Schottky barrier diode is ideal for use in high-output electronic systems such as air conditioners, communication base stations, and solar power arrays. The new device also incorporates technology developed jointly by Hitachi, Ltd., and Renesas Electronics, which contributed to achieving approximately 40 percent reduced low power consumption … Read More → "Renesas Electronics Announces Low-Loss Silicon Carbide (SiC) Power Devices Integrating Power Conversion Circuit in Single Chip"

