Texas Instruments gate drivers target IGBT and SiC FET designs
DALLAS (Feb. 26, 2013) – Texas Instruments Incorporated (TI) (NASDAQ:TXN) today introduced the industry’s first 35-V, single-channel, output stage power management gate drivers for insulated-gate bipolar transistors (IGBTs) and silicon carbide (SiC) FETs. TI’s new UCC27531 and UCC27532 output stage gate driverswith split output provide the most efficient output drive capability, shortest propagation delay and increased system protection for isolated … Read More → "Texas Instruments gate drivers target IGBT and SiC FET designs"

