CEA-Leti & STMicroelectronics’ Paper at IEDM 2025 Demonstrates Path to Fully Monolithic Silicon RF Front-Ends with 3D Sequential Integration
SAN FRANCISCO — Dec. 9, 2025 — CEA-Leti and STMicroelectronics today presented results at IEDM 2025 showcasing key enablers for a new high-performance and versatile RF Si platform cointegrating best-in-class active and passive devices used in RF and Optical FEM. Their paper details 3D sequential integration of silicon-germanium (SiGe) heterojunction bipolar transistors (HBT), RF SOI switches, and high-quality passives on a single wafer—opening a path to highly integrated, low parasitic, and targeting cost-efficient systems for next-generation wireless and wireline communications.

