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Innoscience signs distribution agreement with Finepower providing European & Chinese customers with specialist design-in support

World's largest 8-inch GaN-on-Si device maker partners with German power electronics Innovation Hub
19th July 2022 – Innoscience Technology, a company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, has signed a distribution agreement with Finepower, the engineering and distribution company focused on power electronic applications with operations in Germany and China.

The agreement covers Europe, China and worldwide for specified customers. Dr Denis Marcon, General Manager, Innoscience Europe comments: “Finepower brands itself as the ‘Innovation Hub’ for power semiconductors and offers both engineering and distribution services. Therefore we are sure that they will be an excellent partner for Innoscience, both in educating the market about the leading performance and reliability offered by our InnoGaN solutions and in ensuring a secure supply chain for customers.”

Adds Reiko Winkler, General Manager of Finepower: “Finepower is already very experienced in working on customers’ applications using GaN. And we are excited to extend our portfolio with High Voltage GaN devices by adding Innoscience – the world’s largest 8-inch GaN-on-Si device manufacturer – to our line-up. With a capacity of 10,000 8-inch wafers per month (WPM), which will grow to 70,000 WPM by 2025, Innoscience is ensuring that the world can begin designing with GaN now, with no delay. That is hugely empowering for all markets.”

About Innoscience

Innoscience is an Integrated Device Manufacturer (IDM) founded in December 2015 with main investment from CMBI, ARM, SK and CATL. With the development of new technologies, the electric power grid and power electronic systems across the world are undergoing a massive transformation. Our vision is to create an energy ecosystem with the most effective and low-cost Gallium-Nitride-on-Silicon (GaN-on-Si) power solutions. In November 2017, Innoscience first established a mass production 8-inch wafer line for GaN-on-Si devices in Zhuhai. In order to fulfill the rapidly growing power demands, Innoscience has inaugurated a new facility in the Suzhou in September 2020. As a cutting-edge GaN technology provider, Innoscience’s 1,400+ employees and over 300 R&D experts are dedicated to delivering high performance and high reliability GaN power devices that can be widely used in diverse applications including cloud computing, electric vehicles (EV) and automotive, portable devices, mobile phones, chargers and adapters. For more information, please visit

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