Dr Denis Marcon, General Manager, Innoscience Europe, has been selected as a speaker at this prestigious international event. The title of his presentation is:

Slashing the last barriers for the widespread adoption of GaN-based power transistors

12:30 – 12:50PM, May 10th 2022, Industry Forum, Booth 6-246

He comments: “Many electronic engineers already understood the benefit of using GaN-based transistors in their systems as they can make more efficient, more compact, lighter and even more reliable power electronic systems by using GaN-based transistor with respect to what is possible with traditional Silicon devices. Yet, there are two barriers to overcome for the wide spreading of GaN technology: high price and security of supply (i.e. mass manufacturing).

“In this talk, we will present Innoscience’s 8-inch GaN-on-Si e-mode technology and discuss how we have overcome the aforementioned barriers hindering the large adoption of GaN-based transistors. We will conclude the talk by giving an overview of applications where Innoscience’s GaN devices (InnoGaN™) have been used and the benefit of using InnoGaN™ transistors instead of traditional Silicon devices.”

Innoscience will also exhibit at the event on booth 7-249, showcasing its unique, high and low voltage GaN solutions in applications. The company is the world’s largest Integrated Device Manufacturer (IDM) fully focused on GaN technology, with a monthly capacity of 10,000 8-inch wafers per month (WPM). This capacity is set to grow to 70,000 WPM by 2025.

Additionally, visitors to Innoscience’s booth will be able to see designs done in partnership with specialized gate-driver companies Heyday and MindCet. Innoscience’s GaN HEMT devices can, of course, be used in conjunction with other gate drivers. The company’s devices range from 30V to 650V and are widely used in in applications from USB PD chargers/adapters to data centers, mobile phones and LED drivers.

Dr Marcon added: “We are excited to welcome visitors to PCIM which is Innoscience’s first public showcase in Europe. We will demonstrate the huge capacity we already have – the largest in the world – and a wide portfolio of devices which are available now. Innoscience also has the capability to rapidly design and manufacture in high volumes to support customers’ requirements wherever they are located globally.”

For further information visit https://www.innoscience.com/.

– Ends –

About Innoscience

Innoscience is an Integrated Device Manufacturer (IDM) founded in December 2015 with main investment from CMBI, ARM, SK and CATL. With the development of new technologies, the electric power grid and power electronic systems across the world are undergoing a massive transformation. Our vision is to create an energy ecosystem with the most effective and low-cost Gallium-Nitride-on-Silicon (GaN-on-Si) power solutions. In November 2017, Innoscience first established a mass production 8-inch wafer line for GaN-on-Si devices in Zhuhai. In order to fulfill the rapidly growing power demands, Innoscience has inaugurated a new facility in the Suzhou in September 2020. As a cutting-edge GaN technology provider, Innoscience’s 1,400+ employees and over 300 R&D experts are dedicated to delivering high performance and high reliability GaN power devices that can be widely used in diverse applications including cloud computing, electric vehicles (EV) and automotive, portable devices, mobile phones, chargers and adapters. For more information, please visit http://www.innoscience.com.