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Infineon OptiMOS™ 6 80V MOSFET sets new benchmark in DC-DC power conversion efficiency in leading AI server platform

Munich, Germany – 7 May 2025 – As graphics processing units (GPUs) keep getting more powerful, so do the power requirements at the board level. Intermediate bus converters (IBCs) – which convert for example a 48 V input voltage to a lower bus voltage – are becoming more important for energy efficiency, power density, and thermal performance in AI data centers. Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) announced that its OptiMOS™ 6 80V power MOSFETs in a compact 5×6 mm² dual side cooling (DSC) package have been integrated into the IBC stage of an AI server platform of a leading processor manufacturer. Application tests show an efficiency increase of around 0.4 percent compared to previously used solutions, corresponding to a saving of around 4.3 W per kW of load. At the system level, this leads to significant energy savings when scaled across server racks or entire data centers. For instance, scaling this across a hypothetical hyperscale data center with 2,000 racks would result in over 1.2 MWh in energy savings every hour – the equivalent energy needed to charge 25 small electric vehicles. The implications of this development are substantial, with cost savings and reduced carbon footprint for data center operators.

As the demand for AI computing continues to grow, the need for efficient power management solutions will increase. Infineon’s OptiMOS 6 80V is well-positioned to meet the growing energy-efficiency demand, offering a high-performance solution for AI server IBCs. Infineon’s OptiMOS 6 80V MOSFET in the 5×6 mm² DSC package offers optimized switching performance in hard switching topologies and high energy efficiency due to lower conduction losses. Additionally, the compact package enables cooling on both sides, which contributes to improved thermal management and higher power density – both crucial in AI server environments with limited space.

The OptiMOS 6 80V is part of Infineon’s broad portfolio of silicon power MOSFETs, designed to meet the growing demands for performance, efficiency, and integration in AI server applications. The portfolio leverages the latest MOSFET technology and offers various application-specific variants, optimized for different cooling concepts and system requirements. Infineon silicon power MOSFETs meet the highest quality and protection standards, enabling assured product reliability, dependable system uptime, and proven supply stability.

As the leader in power systems, Infineon is mastering all three relevant semiconductor materials, with a broad portfolio in silicon (Si) alongside silicon carbide (SiC) and gallium nitride (GaN).

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Further information is available here.

Infineon at the PCIM Europe 2025
PCIM Europe will take place in Nuremberg, Germany, from 6 to 8 May 2025. Infineon will present its products and solutions for decarbonization and digitalization in hall 7, booth #470. Company representatives will also be giving several presentations at the PCIM Expo stages and the accompanying PCIM Conference, followed by discussions with the speakers. If you are interested in interviewing an expert at the show, please email  media.relations@infineon.com . Industry analysts interested in a briefing can email  MarketResearch.Relations@infineon.com . Information about Infineon’s PCIM 2025 show highlights is available at  www.infineon.com/pcim .

About Infineon

Infineon Technologies AG is a global semiconductor leader in power systems and IoT. Infineon drives decarbonization and digitalization with its products and solutions. The Company had around 58,060 employees worldwide (end of September 2024) and generated revenue of about €15 billion in the 2024 fiscal year (ending 30 September). Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the OTCQX International over-the-counter market (ticker symbol: IFNNY).

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