industry news
Subscribe Now

Expanded SiC Schottky Diode Line from Littelfuse Reduces Switching Losses, Increases Efficiency and Robustness

Ideal for applications that demand improved reliability and thermal management

CHICAGO, January 15, 2017 — Littelfuse, Inc., the global leader in circuit protection, today introduced four new series of 1200V silicon carbide (SiC) Schottky Diodes from its GEN2 product family, which was originally released in May 2017.

The LSIC2SD120A08 Series, LSIC2SD120A15 Series, and LSIC2SD120A20 Series offer current ratings of 8A, 15A ,20A, respectively and are provided in the popular TO-220-2L package. Additionally, the LSIC2SD120C08 Series offers a current rating of 8A in a TO-252-2L package. The merged p-n Schottky (MPS) device architecture of the GEN2 SiC Schottky Diodes enhances surge capability and reduces leakage current. Replacing standard silicon bipolar power diodes with the new GEN2 SiC Schottky Diodes allows circuit designers to reduce switching losses dramatically, accommodate large surge currents without thermal runaway, and operate at junction temperatures as high as 175°C. This allows for substantial increases in power electronics system efficiency and robustness.

Typical applications for these new GEN2 SiC Schottky Diodes include:

  • Active power factor correction (PFC).
  • Buck or boost stages in DC-DC converters.
  • Free-wheeling diodes in inverter stages.
  • High-frequency output rectification.

The markets they can serve include industrial power supplies, solar energy, industrial motor drives, welding and plasma cutting, EV charging stations, inductive cooking fields and many others.

“The latest GEN2 SiC Schottky Diodes are ideal solutions for circuit designers who need to reduce switching losses, accommodate large surge currents without thermal runaway, and operate at higher junction temperatures,” said Michael Ketterer, Global Product Marketing Manager, Power Semiconductors at Littelfuse. “They expand the component options available to circuit designers striving to improve the efficiency, reliability, and thermal management of the latest power electronics systems.”

GEN2 SiC Schottky Diodes offer these key benefits:

  • Best-in-class capacitive stored charge and negligible reverse recovery ensures switching losses are extremely low and reduces stress on the opposing switch, making them suitable for high-frequency power switching.
  • Best-in-class forward voltage drop (VF) provides for low conduction losses.
  • The maximum junction temperature of 175°C allows for a larger design margin and relaxed thermal management requirements.

Availability
LSIC2SD120A08 Series, LSIC2SD120A15 Series, and LSIC2SD120A20 Series GEN2 1200V SiC Schottky Diodes are available in TO-220-2L packages in tubes in quantities of 1,000. Meanwhile,LSIC2SD120C08 Series GEN2 1200V SiC Schottky Diodes are available in TO-252-2L package in tape and reel in quantities of 2,500.  Sample requests may be placed through authorized Littelfuse distributors worldwide. For a listing of Littelfuse distributors, please visit Littelfuse.com.

For More Information
Additional information is available on the LSIC2SD120A08 SeriesLSIC2SD120A15 SeriesLSIC2SD120A20 Series, and LSIC2SD120C08 Series  GEN2 1200V SiC Schottky Diodes product pages. For technical questions, please contact: Michael Ketterer, Global Product Marketing Manager, Power Semiconductors,mketterer@littelfuse.com.

About Littelfuse
Founded in 1927, Littelfuse is the world leader in circuit protection with growing global platforms in power control and sensing. The company serves customers in the electronics, automotive and industrial markets with technologies including fuses, semiconductors, polymers, ceramics, relays and sensors. Littelfuse has over 10,000 employees in more than 40 locations throughout the Americas, Europe and Asia. For more information, please visit Littelfuse.com.

Leave a Reply

featured blogs
Apr 24, 2026
A thought experiment in curiosity, confusion, and cosmic consequences....

featured paper

Quickly and accurately identify inter-domain leakage issues in IC designs

Sponsored by Siemens Digital Industries Software

Power domain leakage is a major IC reliability issue, often missed by traditional tools. This white paper describes challenges of identifying leakage, types of false results, and presents Siemens EDA’s Insight Analyzer. The tool proactively finds true leakage paths, filters out false positives, and helps circuit designers quickly fix risks—enabling more robust, reliable chip designs. With detailed, context-aware analysis, designers save time and improve silicon quality.

Click to read more

featured chalk talk

Nexperia GaN Power Proliferating in All Things Motor Control/Drive
Sponsored by Mouser Electronics and Nexperia
In this episode of Chalk Talk, Art Gonsky from Nexperia and Amelia Dalton discuss the biggest challenges of electric motors and controllers and how GaN power solutions can help solve these issues. They  also investigate how silicon, silicon carbide and GaN power solutions compare and how Nexperia and NXP technologies can get your next motor control design up and running in no time!     
Mar 25, 2026
29,507 views