Plano, Texas – July 9th, 2015 – The DMN2014LHAB and DMN2011UFX dual N-channel enhancement mode MOSFETs introduced by Diodes Incorporated provide a compact, bi-directional low-loss switch for battery-charging circuits. End-markets include chargers for portable devices such as smartphones, tablets, cameras and media players, which use 1-cell and 2-cell lithium batteries.
The DMN2014LHAB and DMN2011UFX are configured as dual common-drain MOSFETs and, when switched on, these devices allow bi-directional current flow for charging or operational use. When switched off they protect the battery by preventing over-charging or excessive current drain. With a 20V breakdown rating, the DMN2014LHAB and DMN2011UFX also feature low on resistance, RDS(on) < 13m? and < 9.5m? respectively, to reduce battery power loss in normal operation. A high maximum peak current up to 80A allows the switch to briefly handle short-circuit conditions before the protection circuitry kicks in, while a low gate threshold voltage, VGS(th) <1V, ensures correct operation even with drive voltages as low as 1.8V.
The DMN2014LHAB is available in the tiny 2mm x 3mm DFN2030 package and the DMN2011UFX is offered in the 2mm x 5mm DFN2050, providing small form-factor solutions that allow designers to use the space saved for additional cells and increase the battery’s mAh capacity.
In 3k piece quantities, the DMN2014LHAB and DMN2011UFX are priced at $0.17 and $0.25 each. Further information is available at http://www.diodes.com
About Diodes Incorporated
Diodes Incorporated (Nasdaq: DIOD), a Standard and Poor’s SmallCap 600 and Russell 3000 Index company, is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets. Diodes’ products include diodes, rectifiers, transistors, MOSFETs, protection devices, functional specific arrays, single gate logic, amplifiers and comparators, Hall-effect and temperature sensors; power management devices, including LED drivers, AC-DC converters and controllers, DC-DC switching and linear voltage regulators, and voltage references along with special function devices, such as USB power switches, load switches, voltage supervisors, and motor controllers. Diodes’ corporate headquarters and Americas’ sales office are located in Plano, Texas. Design, marketing, and engineering centers are located in Plano; San Jose, California; Taipei, Taiwan; Manchester, England; and Neuhaus, Germany. Diodes’ wafer fabrication facilities are located in Kansas City, Missouri and Manchester, with two additional facilities located in Shanghai, China. Diodes has assembly and test facilities located in Shanghai and in Chengdu, China, as well as in Neuhaus and Taipei. Additional engineering, sales, warehouse, and logistics offices are located in Taipei; Hong Kong; Manchester; Shanghai; Shenzhen, China; Seongnam-si, South Korea; and Munich, Germany, with support offices throughout the world. For further information, including SEC filings, visit Diodes’ website athttp://www.diodes.com.
