Geneva, September 15, 2014 – STMicroelectronics has extended its leading-edge STripFET™ F7 series of low-voltage Power MOSFETs with three new 100V automotive-grade devices. The STH315N10F7-2, STH315N10F7-6, and STP315N10F7 feature an optimized body-drain diode performance that minimizes voltage spikes and switching noise over the operating voltage range, allowing more robust, reliable, and power-efficient designs.
STripFET™ F7 devices exploit an enhanced trench-gate structure that lowers device on-state resistance while simultaneously reducing internal capacitances and gate charge to deliver faster and more power-efficient switching. The three new devices bring these benefits to the automotive market, offering the industry’s lowest RDS(on) x Area and turn-off energy (Eoff) parameters available in the automotive market.
The new devices incorporate an optimized Crss/Ciss capacitive ratio to minimize switching noise, which, together with appropriate diode reverse-recovery softness, decreases EMI/EMC emissions. This eliminates the need for external filtering circuitry, reducing board area and costs.
ST’s new Power MOSFETs are tailored for automotive applications that require high current and power density and outstanding efficiency, including DC/DC, DC/AC and resonant LC converters in Hybrid and Electric Vehicles.
All three devices are Automotive Qualified to AEC-Q101. The STH315N10F7-2 and STH315N10F7-6 are housed in H2PAK packages with low stray inductance and high current capability and the STP315N10F7 is housed in a standard TO-220 package.
Available in volume, the STH315N10F7-2 and STH315N10F7-6 are priced at $3.80 and the STP315N10F7 is priced at $3.50 for orders of 1,000 units.
For further information please visit: http://www.st.com/agstripfetf7
