Geneva, January 13, 2014 – New dual-configuration Schottky silicon-carbide (SiC) diodes from STMicroelectronics are the first such devices in the industry with a voltage rating of 650V per diode in a choice of common-cathode or series configurations allowing use in interleaved or bridgeless power-factor correction (PFC) circuits.

ST is a leading innovator of SiC power semiconductors that have inherently higher energy efficiency and ruggedness compared to ordinary silicon alternatives. ST’s STPSC6/8/10TH13TI and STPSC8/12/16/20H065C devices^[1] combine SiC performance advantages with the space savings and EMI reduction of dual integrated diodes. They are ideal for interleaved or bridgeless PFC topologies that enhance energy efficiency of equipment such as server and telecom power supplies, solar inverters, or electric-vehicle charging stations.

The industry-unique diodes eliminate energy losses due to reverse recovery at turn-off, thereby optimizing switching efficiency, and the 650V voltage rating provides increased safety margin against hazardous reverse-voltage spikes. In addition, ceramic isolation built into the package of the STPSCxxTH13TI devices simplifies attachment to an external heatsink, allowing the removal of the usual external isolation. 

The STPSC6TH13TI through STPSC10TH13TI (series configuration in insulated TO-220AB package) and STPSC8H065C through STPSC20H065C (common-cathode in standard TO-220AB) are available immediately, priced from $4.24 for orders of 1000 pieces. The STPSC20H065C is also available in TO-247.

For further information please go to www.st.com/sicdiodes