Plano, Texas – July 16th, 2013 – Diodes Incorporated has announced the industry’s first small-signal bipolar transistors to be provided in the miniature DFN0806-3 package. With a footprint of 0.48mm2 and an off-board profile of only 0.4mm, the transistors are 20% smaller than equivalent DFN1006, SOT883 and SOT1123 parts.
The bipolar’s size advantage, coupled with a commendable 400mW power dissipation capability, will benefit smartphone, tablet and other space-critical portable product designs. Two complementary pairs of NPN and PNP transistors are initially being introduced by Diodes in the DFN0806-3 package, with pre-biased (digital) transistors to follow.
The NPN MMBT3904FA and PNP MMBT3906FA transistors are 40V VCE rated, handle a continuous current of 200mA and support a 500mA peak pulse current. The NPN BC847BFA and PNP BC857BFA devices are 45V rated and have continuous current and pulse current handling capabilities of 100mA and 200mA, respectively.
The MMBT3904FA, MMBT3906FA, BC847BFA and BC857BFA transistors are priced at $ 0.08 USD each in 10 k quantities. For further information visitwww.diodes.com
About Diodes Incorporated
Diodes Incorporated (Nasdaq: DIOD), a Standard and Poor’s SmallCap 600 and Russell 3000 Index company, is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets. Diodes’ products include diodes, rectifiers, transistors, MOSFETs, protection devices, functional specific arrays, single gate logic, amplifiers and comparators, Hall-effect and temperature sensors; power management devices, including LED drivers, AC-DC converters and controllers, DC-DC switching and linear voltage regulators, and voltage references along with special function devices, such as USB power switches, load switches, voltage supervisors, and motor controllers. Diodes’ corporate headquarters, logistics center, and Americas’ sales office are located in Plano, Texas. Design, marketing, and engineering centers are located in Plano; San Jose, California; Taipei, Taiwan; Manchester, England; and Neuhaus, Germany. Diodes’ wafer fabrication facilities are located in Kansas City, Missouri and Manchester, with four manufacturing facilities located in Shanghai, China, and two joint venture facilities located in Chengdu, China, as well as manufacturing facilities located in Neuhaus and Taipei. Additional engineering, sales, warehouse, and logistics offices are located in Fort Worth, Texas; Taipei; Hong Kong; Manchester; Shanghai; Shenzhen, China; Seongnam-si, South Korea; Suwon, South Korea; Tokyo, Japan; and Munich, Germany, with support offices throughout the world. For further information, including SEC filings, visit Diodes’ website at http://www.diodes.com.
