Mont-Saint-Guibert, Belgium – November 3, 2011. CISSOID, the leader in high-temperature and high reliability semiconductor solutions launched HADES®, the first isolated gate driver solution designed to drive high temperature power transistors, specifically (but not exclusively) Silicon carbide (SiC) and Gallium nitride (GaN) fast-switching devices.
With HADES®, system engineers can develop power converters that are 5 times smaller and lighter than before, with better efficiency. They will also get power converters able to operate in high temperature ambiance if required. No matter what the ambient temperature is, the life time of the system will be an order of magnitude longer than traditional solutions.
HADES® has been designed to drive seamlessly Silicon Carbide (SiC) power transistors, which have low switching losses. HADES® can switch them at high frequencies, which means smaller and lighter passive and magnetic components. Furthermore, thanks to its ability to sustain high temperatures, HADES® can be located next to the power transistors which reduces parasitic capacitances and inductances, and that further improves the associated losses and delays in the system.
HADES® is a reference design and an Evaluation Board delivered with full documentation. It can drive two SiC MOSFET power switches on a DC bus voltage up to 1200V. The Reference design is scalable up to +/-20A gate current, while the Evaluation Board features +/-4A. A specific board flavour for normally-On JEFTs will also be available, and other types of switching devices (normally-On/Off JFETs, BJTs and IGBTs) can be supported with minor changes.
In terms of efficiency, the combination of HADES® with the newest SiC switches in advanced power converter topologies will bring efficiencies in excess of 98%, even at switching frequencies above 100kHz.
HADES®gate driver is the ideal solution for high-power converters such as motor drives, battery chargers and power distribution used in applications like railway, aircrafts, renewable energies and hybrid / electric vehicles. It delivers high power density, simplified cooling and high reliability. The fast-switching ability of HADES® plus the fact it can operate reliably at the same temperature as the switches (200°C junction and above) makes it a solution of choice for the new generation of Intelligent Power Modules (IPM).
HADES® is built from CISSOID’s chipset CHT-THEMIS, CHT-ATLAS and CHT-RHEA. With its on-board isolated power supply based on CISSOID’s PWM controller CHT-MAGMA and derived from STROMBOLI® technology, HADES® requires a single +12V supply. All CISSOID’ HADES® active components are guaranteed for normal operation over the full range -55°C to +225°C. The magnetic isolation of the power supply also sustains reliably high temperatures, as opposed to optocouplers.
On-board protection functions include Under Voltage Lockout (UVLO) and Desaturation Detection that monitors the drain-to-source voltage of the power transistor to detect over-currents. The board also implements Active Miller Clamping function which prevents parasitic turn-on due to the Miller capacitor of the power switch.
The Evaluation Kit, referenced EVK-HADES is available now, and is priced at $10,725. For more information, visit www.cissoid.com or contact the company’s representatives at www.cissoid.com/company/about-us/contacts.html.
