“Intel Corporation and Micron Technology Inc. today introduced a new, finer 20-nanometer (nm) process technology for manufacturing NAND flash memory. The new 20nm process produces an 8-gigabyte (GB) multi-level cell (MLC) NAND flash device, providing a high-capacity, small form factor storage option for saving music, video, books and other data on smartphones, tablets and computing solutions such as solid-state drives (SSDs).”
via Engadget
 Want early design analysis without simulation?Sponsored by Siemens Digital Industries Software Traditional verification methods are failing today's complex IC designs, which require a proactive, early-stage analysis approach. A shift-left methodology addresses IP block integration challenges and the limitations of traditional simulation and ERC tools. Insight Analyzer detects hard-to-find leakage issues across power domains, enabling early analysis without full simulation. Identify inefficiencies earlier to reduce rework, improve reliability, and enhance power performance. |
