editor's blog
Subscribe Now

EUV Blasts through 100 W

The EUV barrier has been broken.

And I found out right on the heels of yesterday’s EUV update – but too late to get it into that piece. Remember the issue with the misalignment of the laser? That happened when bringing the system back up from a power upgrade. Well, there’s more to it than most of us realized.

While the power upgrade was officially for 30 W publicly, they had had a breakthrough and were privately hoping for a lot more. They just didn’t want to say anything about it until they knew it would work; there have already been far too many expectations set and then missed with this technology. And the timing with SPIE Litho would have been perfect – what an amazing opportunity for a surprise announcement. But the glitch during bring-up messed all that up. The PR folks must have been going nuts.

But here’s the bottom line: the 30 W was a lowball goal. Once they got the system up and running again, they were able to push things to see how far they could get. And they got as high as 108 W!! This gets us past that magical 100-W barrier.

As I mentioned in yesterday’s piece, we don’t usually rush to press with breathless news, but this seems pretty big, given that it’s what so many folks have been waiting for. There’s been no formal announcement yet, but my source (who wishes to remain anonymous) said that the team’s excitement is beyond measure.

More details as they unfoold…

Leave a Reply

featured blogs
Oct 20, 2020
In 2020, mobile traffic has skyrocketed everywhere as our planet battles a pandemic. Samtec.com saw nearly double the mobile traffic in the first two quarters than it normally sees. While these levels have dropped off from their peaks in the spring, they have not returned to ...
Oct 20, 2020
Voltus TM IC Power Integrity Solution is a power integrity and analysis signoff solution that is integrated with the full suite of design implementation and signoff tools of Cadence to deliver the... [[ Click on the title to access the full blog on the Cadence Community site...
Oct 19, 2020
Have you ever wondered if there may another world hidden behind the facade of the one we know and love? If so, would you like to go there for a visit?...
Oct 16, 2020
[From the last episode: We put together many of the ideas we'€™ve been describing to show the basics of how in-memory compute works.] I'€™m going to take a sec for some commentary before we continue with the last few steps of in-memory compute. The whole point of this web...

featured video

Demo: Inuitive NU4000 SoC with ARC EV Processor Running SLAM and CNN

Sponsored by Synopsys

See Inuitive’s NU4000 3D imaging and vision processor in action. The SoC supports high-quality 3D depth processor engine, SLAM accelerators, computer vision, and deep learning by integrating Synopsys ARC EV processor. In this demo, the NU4000 demonstrates simultaneous 3D sensing, SLAM and CNN functionality by mapping out its environment and localizing the sensor while identifying the objects within it. For more information, visit inuitive-tech.com.

Click here for more information about DesignWare ARC EV Processors for Embedded Vision

featured paper

Fundamentals of Precision ADC Noise Analysis

Sponsored by Texas Instruments

Build your knowledge of noise performance with high-resolution delta-sigma ADCs. This e-book covers types of ADC noise, how other components contribute noise to the system, and how these noise sources interact with each other.

Click here to download the whitepaper

Featured Chalk Talk

Wide Band Gap: Silicon Carbide

Sponsored by Mouser Electronics and ON Semiconductor

Wide bandgap materials such as silicon carbide are revolutionizing the power industry. From electric vehicles and charging stations to solar power to industrial power supplies, wide bandgap brings efficiency, improved thermal performance, size reduction, and more. In this episode of Chalk Talk, Amelia Dalton chats with Brandon Becker from ON Semiconductor about the advantages of silicon carbide diodes and MOSFETs.

Click here for more information about ON Semiconductor Wide Bandgap SiC Devices