editor's blog
Subscribe Now

A Big Endurance Boost

Flash memories degrade over time as the oxide gets damaged and loses its ability to hold charge. It’s apparently well known that this damage can be annealed out, but that takes time and/or temperature. You can’t heat the chip over 400 °C, so you have to anneal for minutes for nominal results.

As described in an IEDM paper, Macronix modified their cell to allow a high current in the vicinity of the cell. By running that current for milliseconds, it could create local heating above 800 °C. This resulted in endurance over 100,000,000 cycles with good retention.

Alongside the MRAM papers, it strikes me as a familiar thing because Crocus also uses a local heater for thermally-assisted switching of their MRAM cells, although the temperatures aren’t nearly as high. I don’t know if this is truly a case of cross-pollination, but it feels like it.

If you have the IEDM proceedings, more detail is available in paper #9.1.

Leave a Reply

featured blogs
Jan 17, 2019
After two interesting blogs by Yagya Mishra that explained the most popular features of the Run Plan assistant in Virtuoso® ADE Assembler , I am writing this third blog in the series to share... [[ Click on the title to access the full blog on the Cadence Community site...
Jan 16, 2019
112 Gbps Samtec Flyover'„¢ Demo Samtec'€™s Ralph Page walks us through a live demonstration of a Samtec Flyover'„¢ system which enables 112 Gbps PAM4 performance. The Credo CDR generates two ports of 31-bit PRBS data at 112 Gbps PAM4 data rates. The signal travels from...