Microsemi Expands S-Band RF Power Transistor Family to Include High-Performance GaN-on-SiC Devices
IRVINE, Calif., June 6, 2011 — Microsemi Corporation (Nasdaq:MSCC), a leading provider of semiconductor technology aimed at building a smart, secure, connected world, has expanded its family of S-band RF power transistors to include devices that use advanced gallium nitride (GaN) process technology on a silicon carbide (SiC) substrate. The company’s GaN-on-SiC high-pulsed power transistors deliver industry-leading peak power and power gain for radar systems operating in the 2.7 GHz to 3.5 GHz frequency band.
“This is a significant step in Microsemi’s ongoing strategy to extend its product development and marketing initiatives to support the increasingly challenging requirements … Read More → "Microsemi Expands S-Band RF Power Transistor Family to Include High-Performance GaN-on-SiC Devices"

