ASM Qualifies New Higher-k Gate Process for 14nm Manufacturing
ALMERE, The Netherlands, December 5, 2011 -ASM International N.V. (www.asm.com) (NASDAQ: ASMI and Euronext Amsterdam: ASM), the leader in atomic layer deposition (ALD) of high-k gate materials, today announced the successful demonstration of a new 14nm high-k gate dielectric process that achieved less than 6 angstroms equivalent oxide thickness (EOT) at a customer’s 14nm R&D line, an improvement of about 40% from the current advanced nodes. The new high-k process improves device performance by enabling faster switching and lower leakage current, while reconfirming the extendibility of hafnium based … Read More → "ASM Qualifies New Higher-k Gate Process for 14nm Manufacturing"

