British technological breakthrough will cut the cost of energy-efficient high-brightness (HB) LED lighting by 80% through the use of 6-inch gallium nitride (GaN)on silicon technology
Plymouth, ENGLAND – 7 February 2012 – Plessey has acquired CamGaN Limited, a University of Cambridge spin-out formed to commercialisenovel technologies for the growth of gallium nitride (GaN) high-brightness LEDs on large-area silicon substrates. The acquisition will enable Plessey to exploit synergies with its 6-inch processing facility in Plymouth, England to produce HB LEDs based on CamGaN’s proprietary 6-inch GaN-on-silicon technology. The Company believes this acquisition positions it among the first commercial players to successfully manufacture HB LEDs on 6-inch silicon substrates.
The newly acquired Plessey HB LED solution enables the growth of thin HB LED structureson standard, readily … Read More → "British technological breakthrough will cut the cost of energy-efficient high-brightness (HB) LED lighting by 80% through the use of 6-inch gallium nitride (GaN)on silicon technology"
