Cree Technology Breakthrough Enables 50 Amp Silicon Carbide Power Devices, Bringing Efficiency and Cost Savings to a Broader Range of High-Power Applications
DURHAM, N.C.–(BUSINESS WIRE)– In a breakthrough that redefines performance and energy efficiency in high-power applications, Cree, Inc. (Nasdaq: CREE) announces a new family of 50A Silicon Carbide (SiC) devices, including the industry’s first 1700V Z-FETT SiC MOSFET. These new 50A SiC devices, which also include a 1200V Z-FET SiC MOSFET and three Z-RecR SiC Schottky diodes, will enable a new generation of power systems with record-setting energy efficiency and lower cost of ownership than with conventional technologies.

