Imec demonstrates the first 3D implementation of a charge coupled device for AI memory applications
This week, at the 2026 IEEE International Memory Workshop (IMW), imec, a world-leading research and innovation hub in advanced semiconductor technologies, presents a 3D implementation of a CCD memory device with IGZO channel – a world first. The functional 3D CCD device consists of vertical memory holes drilled through a stack of 3 word-lines, serving as phase gates. Transfer of charges (that make up the bits) across the gates could be demonstrated at >4MHz transfer speed. The feasibility of processing the CCD device in a 3D NAND Flash architecture ensures cost-effective fabrication and … Read More → "Imec demonstrates the first 3D implementation of a charge coupled device for AI memory applications"

