Microsemi’s New SiC Schottky Diodes Improve Electrical Power Conversion Efficiency
ALISO VIEJO, Calif., Nov. 15, 2012 ? Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today introduced a new family of 1200 volt (V) Schottky diodes based on silicon carbide (SiC) material and technology. The new diodes are targeted at a wide range of industrial applications including solar inverters, welding, plasma cutters, fast vehicle charging, oil exploration, and other high power, high voltage applications where power density, higher performance and reliability are important.
SiC offers a number of benefits compared to silicon material (Si) including a higher breakdown field … Read More → "Microsemi’s New SiC Schottky Diodes Improve Electrical Power Conversion Efficiency"

