GRENOBLE, France – Dec. 7, 2015 – CEA-Leti today announced it has signed an agreement with Keysight Technologies, the industry-leading device-modeling software supplier, to adapt Leti’s UTSOI extraction flow methodology within Keysight’s device modeling solutions for high-volume SPICE model generation.

The simulation of the Leti-UTSOI compact model, which is the first complete compact model dedicated to Ultra-Thin Body and Box and Independent Double Gate MOSFETs, is currently available in Keysight’s modeling and simulation tools. This agreement expands the collaboration to include the extraction flow and will enable device-modeling engineers to efficiently create Leti-UTSOI model cards for … Read More → "Leti to Collaborate with Keysight Technologies To Enable Expansion of FD-SOI Technology"

• Joint development team leverages SEMulator3D to explore semiconductor process variation issues at unprecedented levels
• Collaboration team has conducted a massive computer modeling simulation of a million wafers to explore process variability in 7nm BEOL semiconductor fabrication
• The extending collaboration aims to further advance the availability, yield and cost of manufacturing processes for the next generation of 7 nm semiconductor products

Leuven, Belgium & Cary, North Carolina, United States – December 7, 2015 – Imec, a world-leading nanoelectronics research center and Coventor, a leading supplier of semiconductor process development tools, today announced the expansion of … Read More → "Imec, Coventor expand collaboration to optimize 7nm semiconductor manufacturing processes"

GRENOBLE, France – Dec. 7, 2015 – CEA-Leti today announced preliminary steps for demonstrating a quantum bit, or qubit, the building block of quantum information, in a process utilizing a silicon-on-insulator (SOI) CMOS platform.

While the leading solid-state-based approach today for treating quantum information uses superconducting qubits, there are several potential alternatives. These include semiconductor spin qubits, historically demonstrated in III-V materials, but with limited “lifetime” due to coupling between the electron spin and the nuclear spins of the III-V elements.

Only in recent years has the prospect of using nuclear spin-free, isotopically purified silicon-28, the most-common isotope, made … Read More → "CEA-Leti and CEA-Inac Pave the Way for Quantum Information Processing on SOI CMOS Platform"