GRENOBLE, France – Dec. 8, 2015 – CEA-Leti today announced it has developed two techniques to induce local strain in FD-SOI processes for next-generation FD-SOI circuits that will produce more speed at the same, or lower, power consumption, and improve performance.

The local-strain solutions are dual-strained technologies: compressive SiGe for PFETs and tensile Si for NFETs. In addition to clearing the path to improved performance in FD-SOI technology, they preserve its excellent electrostatic integrity and its in situ performance tunability, due to back biasing.

The two techniques Leti developed can induce local stress as high as 1.6 GPa in the … Read More → "Leti Develops Local-strain Techniques in FD-SOI Fabrication To Improve Next-Generation Performance, Energy Use"

GRENOBLE, France – Dec. 7, 2015 – CEA-Leti today announced it has signed an agreement with Keysight Technologies, the industry-leading device-modeling software supplier, to adapt Leti’s UTSOI extraction flow methodology within Keysight’s device modeling solutions for high-volume SPICE model generation.

The simulation of the Leti-UTSOI compact model, which is the first complete compact model dedicated to Ultra-Thin Body and Box and Independent Double Gate MOSFETs, is currently available in Keysight’s modeling and simulation tools. This agreement expands the collaboration to include the extraction flow and will enable device-modeling engineers to efficiently create Leti-UTSOI model cards for … Read More → "Leti to Collaborate with Keysight Technologies To Enable Expansion of FD-SOI Technology"