Renesas Electronics Announces World’s First Development Fin-Shaped MONOS Flash Memory Cells for High-Performance, Highly Reliable Microcontrollers in 16/14nm Process Nodes and Beyond
Düsseldorf, December 7, 2016 – Renesas Electronics, a premier supplier of advanced semiconductor solutions, today announced its successful development of the world’s first (Note 1) split-gate metal-oxide nitride oxide silicon (SG-MONOS, Note 2) flash memory cells employing transistors with fin-shape for use in microcontrollers (MCUs) with on-chip flash memory having … Read More → "Renesas Electronics Announces World’s First Development Fin-Shaped MONOS Flash Memory Cells for High-Performance, Highly Reliable Microcontrollers in 16/14nm Process Nodes and Beyond"

