Leti Says New FDSOI Light-Sensing Technique Can Make Transistors Far More Sensitive to Visible Light
SAN FRANCISCO – Dec. 7, 2016 – Leti, an institute of CEA Tech, has developed a new light-sensing device that integrates photodiodes below the buried oxide (BOX) of FDSOI transistors, making the transistors very sensitive to visible light.
In this work, photodiodes were co-integrated in the SOI substrate, replacing conventional FDSOI transistor backgate. This device architecture may lead not only to very small pixels with maximized fill factor, but also to more complex light-detection functions, due to complementary effects observed depending on diode polarity and FET type.
Presented today during IEDM 2016 in the paper, “Extending … Read More → "Leti Says New FDSOI Light-Sensing Technique Can Make Transistors Far More Sensitive to Visible Light"

