EpiGaN to Showcase its 200mm GaN-on-Si Epi Wafers for 650V Power Switching and RF Power Applications
Hasselt, Belgium, 15 May 2017 — EpiGaN n.v., a worldwide leading provider of III-nitride epitaxial material solutions for advanced semiconductor manufacturing, will showcase the latest enhancements of its Gallium Nitride on Silicon epi-wafer family that meets industrial specifications for HEMT (High Electron Mobility Transistor) devices at 650V at PCIM Europe 2017 in Nuremberg, Germany (May 16-18, 2017), as well as at CSMantech in Indian Wells, California, USA (May 22-14, 2017). At PCIM Europe, EpiGaN will exhibit in Hall 6, Booth 432.
< … Read More → "EpiGaN to Showcase its 200mm GaN-on-Si Epi Wafers for 650V Power Switching and RF Power Applications"

