TORRANCE, CA – March 16th, 2026— Navitas Semiconductor (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, announced its latest DC-DC power delivery board (PDB) powered by GaNFast™ technology, enabling direct conversion from 800 V to 6 V in one power stage. This breakthrough solution eliminates the traditional 48 V intermediate bus converter (IBC) stage within the compute server trays, maximizing system efficiency, reliability, and valuable real estate, to deliver a simple power delivery solution to support advanced NVIDIA AI infrastructure.
Traditional enterprise and cloud architectures built around legacy 54 V in-rack power distribution are increasingly unable to support the megawatt rack densities demanded by future accelerated computing platforms. Addressing these escalating power requirements requires a fundamental shift in data center power architecture.
NVIDIA is leading the transition to 800 VDC data center power infrastructure, and Navitas is delivering the right technologies to support this shift. Navitas’s 800 V–50 V DC-DC platform introduction was a breakthrough in efficiency and power density; however, 800 V to 50 V conversion still required one more power conversion stage to deliver to Voltage Regulator Modules (VRM), which typically operated at 12 V or below.
As NVIDIA MGX architecture evolves with the future rack design for high compute and power density systems for greater AI performance, they will require direct 800 V-to-6 V (or 12 V) conversion to maximize rack power density and overall efficiency. Converting directly from 800 V eliminates the 50 V IBC stage, reducing conversion losses, freeing valuable board space, and improving end-to-end system efficiency. Navitas’s 6 V output architecture improves system performance versus other already released PDBs by cutting the VRM conversion ratio in half.
Navitas’s 800 V–6 V DC-DC PDB targets to deliver up to 96.5% peak efficiency at full load with 1 MHz switching frequency, enabling a power density of 2,100 W/in³. Approximately 20% thinner than a mobile phone, its ultra-low profile allows for extremely close integration with the GPU board, maximizing transient performance and enhancing power distribution efficiency.
Next-gen 800 V–6 V DC-DC PDB eliminates the 48 V IBC stage, increasing system efficiency, reliability, and saving valuable PCB area.
The primary side employs 16 × 650 V GaNFast FETs in the latest DFN8×8 dual-cooled package, configured in a stacked full-bridge. Center-tapped outputs use 25 V silicon MOSFETs. 1 MHz switching enables the use of the smallest passives and planar magnetics, delivering maximum power density.
