SAN JOSE, Calif. – December 4, 2013 – Fairchild Semiconductor, a leading global supplier of high performance power and mobile semiconductor solutions, introduces a series of 1200 V field stop trench IGBTs. Targeting hard-switching industrial applications such as solar inverters, uninterruptible power supplies (UPS), and welders, this new IGBT series will help power engineers achieve better efficiency and reliability in their designs.
This new 1200 V field stop IGBT series minimizes conduction losses by having a VCE(SAT) of
1.8 V, which is far lower than that of the previous fast-switching NPT IGBTs. These new devices have one of the lowest VCE(SAT) ratings available in the 1200 V fast-switching IGBT market. The switching losses are low with an EOFF value of under 30 µJ/A. All devices contain a co-packed diode optimized for fast switching.
“New, innovative power electronic technologies are required to help solar inverter manufacturers reduce cost, improve efficiency and improve reliability, “ MH Lee, Director, Industrial Power Systems at Fairchild. “Our 1200 V field stop trench IGBT series helps customers drive higher energy efficiencies and high reliability in their solar inverter designs, and helps manufacturers address government regulations and meet their end-customers demand for increased energy savings.”
The 1200 V field stop trench IGBT series also allows designers to operate devices at higher switching frequencies than competitive solutions, helping to reduce the size and cost of the capacitors and inductive components in the circuit. This results in system designs with higher power density, smaller size and lower bill of material costs.
This IGBT series is 100 percent tested for clamped inductive switching at current levels of four times the rated current to guarantee a larger safe operating area (SOA).
These products are available in the smaller TO247 package with 20mm lead-length, compared to the previous family’s TO264 package, and offer a 15, 25, and 40 A current rating.
Features and Benefits:
- Low saturation voltage: VCE(SAT) = 1.8 V @ rated collector current (Ic)
- High speed switching: Low EOFF = 27 µJ/A
- Large SOA (100 percent inductive load switching test; ILM = 4 times Ic rating)
- Easy parallel operation (positive temperature coefficient)
- Tj = 175 degrees C (maximum junction temperature)
- High input impedance
- RoHS compliant
Fairchild Semiconductor’s 1200 V Field Stop Trench IGBTs provide industry-leading technology to meet the energy efficiency and form factor challenges encountered in today’s system designs. These applications are part of Fairchild’s energy efficient power analog ICs, power discrete and optoelectronics solutions that maximize energy savings in high power applications.
Price: in 1,000 quantity pieces
FGH15T120SMD_F155 – 1200 V/15 A: US $3.30
FGH25T120SMD_F155 – 1200 V/25 A: US $4.65
FGH40T120SMD_F155 – 1200 V/40 A: US $6.30
Availability: Samples available upon request
Delivery: 8-12 weeks ARO
Contact Information:
To contact Fairchild Semiconductor about this product, please go to: http://www.fairchildsemi.com/cf/sales_contacts/.
