Researchers at the Niels Bohr Institute have succeeded in using a new form of laser cooling method to cool a two and a half square millimeter semiconducting gallium arsenide (GaAs) membrane with a thickness of 160 nm from room temperature to four degrees above absolute zero – the temperature of liquid helium.
via Gizmag
Image: Koji Usami holding the semiconductor nanomembrane inside its holder (Niels Bohr)
