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GaN FETs: D-Mode Vs E-mode – Nexperia and Mouser Electronics

 

The use of gallium nitride can offer higher power efficiency, increased power density and can reduce the overall size and weight of many industrial, automotive, and data center applications. In this episode of Chalk Talk, Amelia Dalton and Giuliano Cassataro from Nexperia investigate the benefits of Gan FETs, the difference between D-Mode and E-mode GaN FET technology and how you can utilize GaN FETs in your next design.

Click here for more information about Nexperia eMode GaN FETs

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