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Soitec opens new plant, positioning SmartSiC™ as a future electric-vehicle standard

  • Soitec inaugurates new production facility dedicated to SmartSiC™ substrates for future generations of electric vehicles
  • Soitec’s patented SmartCutTM technology allows each substrate to be used 10 times,  reducing CO2 emissions during wafer manufacturing by 70%
  • Launch of new plant is a key step in execution of Soitec’s strategic plan, targeting a threefold increase in addressable markets by 2030

Bernin (Grenoble), France, 28 September 2023 – Soitec (Euronext – Tech Leaders), a world leader in innovative semiconductor materials, today inaugurates its new plant in Bernin, near  Grenoble, in the presence of Thierry Breton, European Commissioner for the Internal Market and Roland Lescure, French Minister Delegate for Industry. 

Soitec has developed its SmartSiC™ technology as a response to vehicle electrification  challenges. 

The technology, based on silicon carbide (SiC), sets a new standard with improved efficiency  for energy conversion systems. Thanks to its reduced energy losses, better thermal  management and improved power density, the material increases the range and performance  of electric vehicles. 

Through the application of SmartCutTM technology, each SiC substrate can be used 10 times. As a result, SmartSiCTM enables electric vehicles to achieve ranges above 500 km, compared  with an average 350 km for vehicles using silicon IGBT1 alternatives – while also reducing CO2 emissions during wafer manufacturing by 70% compared to monocrystalline SiC  substrates. 

Development of the technology began in 2020 in partnership with CEA-Leti and has received  financial support from the French state, the region, local authorities and the European Union. 

A new production facility in step with Soitec’s ambition 

The new plant will have a 2,500 m2footprint and a final production capacity of 500,000  SmartSiCTM wafers per year. 

It will contribute to Soitec’s strategy of sustainable growth towards a threefold expansion of  addressable markets by 2030, reinforcing the company’s leadership position in the strategic  semiconductor materials market. 

1IGBT: insulated-gate bipolar transistor

  

The new plant will lead to the creation of 400 direct jobs, while also reinforcing the  attractiveness and dynamism of the “French Silicon Valley” ecosystem. 

Pierre Barnabé, Chief Executive Officer of Soitec, stated: “More than ever we are ready to  establish our SmartSiCTM technology as a new standard in semiconductor materials for coming  generations of electric cars. This plant will enable us to meet growing demand for silicon  carbide and achieve a 30% market share by 2030, while helping to make electric mobility more  efficient and affordable. Completed in record time, it is the embodiment of our industrial  performance and our future-facing strategy, based on the expansion of our product and  technology portfolio. 

This is also an important day for our region, which is once again showing its dynamic and  exemplary approach to industrial innovation, with technologies designed, developed, and manufactured within our ecosystem. We will create jobs and continue to showcase French  and European knowhow in global semiconductor markets.” 

About Soitec 

Soitec (Euronext – Tech Leaders), a world leader in innovative semiconductor materials, has been  developing cutting-edge products delivering both technological performance and energy efficiency for  over 30 years. From its global headquarters in France, Soitec is expanding internationally with its unique  solutions, and generated sales of 1.1 billion Euros in fiscal year 2022-2023. Soitec occupies a key  position in the semiconductor value chain, serving three main strategic markets: mobile  communications, automotive and industrial, and smart devices. The company relies on the talent and  diversity of its 2,100 employees, representing 50 different nationalities, working at its sites in Europe,  the United States and Asia. Soitec has registered over 4,000 patents.

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