Infineon launches new radiation hardened GaN transistors, including one of the first DLA JANS certified GaN device
Munich, Germany – 29 May 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced the first of a new family of radiation hardened Gallium Nitride (GaN) transistors, fabricated at Infineon’s own foundry, based on its proven CoolGan™ technology. Designed to operate in harsh space environments, the company’s new product is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by … Read More → "Infineon launches new radiation hardened GaN transistors, including one of the first DLA JANS certified GaN device"

