CEA-Leti Reports Machine-Learning Breakthrough That Opens Way to Edge Learning
GRENOBLE, France – Jan. 19, 2021 – CEA-Leti scientists have demonstrated a machine-learning technique exploiting what have been previously considered as “non-ideal” traits of resistive-RAM (RRAM) devices, overcoming barriers to developing RRAM-based edge-learning systems.
Reported in a paper published in the January issue of Nature Electronics titled, “In-situ learning using intrinsic memristor variability via Markov chain Monte … Read More → "CEA-Leti Reports Machine-Learning Breakthrough That Opens Way to Edge Learning"

