SANTA CLARA, Calif. and BOISE, Idaho, 2011-08-11 09:00 CEST (GLOBE NEWSWIRE) — Intel Corporation (Nasdaq:INTC) and Micron Technology, Inc. (Nasdaq:MU), received the Most Innovative Flash Memory Technology award Aug. 10 at the 2011 Flash Memory Summit for the companies’ industry-leading 20 nanometer (nm) NAND Flash memory process technology.
The 20nm 8 gigabyte (GB) NAND device from Intel and Micron delivers the highest capacity in the smallest form factor. Manufactured by IM Flash Technologies, the NAND flash joint venture from Intel and Micron, the new device is a breakthrough in NAND process and technology design, further extending the companies’ lithography leadership.</ … Read More → "Intel and Micron Receive Most Innovative Flash Memory Technology Award at 2011 Flash Memory Summit"