Imec demonstrates extremely high-speed heterojunction bipolar transistors
Leuven (Belgium) – October 10, 2011 – Imec realized a fT/fMAX 245GHz/450GHz SiGe:C heterojunction bipolar transistor (HBT) device, a key enabler for future high-volume millimeter-wave low-power circuits to be used in automotive radar applications. These HBT devices also pave the way to silicon-based millimeter wave circuits penetrating the so-called THz gap, enabling enhanced imaging systems for security, medical and scientific applications.
The extremely high-speed devices have a fully self-aligned architecture by self-alignment of the emitter, base and collector region, and implement an optimized collector doping … Read More → "Imec demonstrates extremely high-speed heterojunction bipolar transistors"

