GLOBALFOUNDRIES and Samsung Extend Fab Sync to New High-Performance 28nm Technology for Mobile Applications
Milpitas, Calif. and Seoul, Korea, August 30, 2011 – GLOBALFOUNDRIES and Samsung Electronics, Co., Ltd.broadened their collaboration, announcing plans to synchronize global semiconductor fabrication facilities to produce chips based on a new high-performance and low-leakage 28nm High-K Metal Gate (HKMG) technology. The technology has been specifically developed for mobile device applications, offering 60 percent of active power reduction at the same frequency or 55 percent of performance boost at the same leakage over 45nm low power (LP) SoC designs.
In 2010, GLOBALFOUNDRIES and Samsung announced a fab synchronization on low-power 28nm HKMG technology … Read More → "GLOBALFOUNDRIES and Samsung Extend Fab Sync to New High-Performance 28nm Technology for Mobile Applications"

