Leuven (Belgium), Honolulu (Hawaii, USA) – June 14, 2012 – In the effort to enhance the advanced metal-high-k gate stack for next-generation logic devices, imec successfully demonstrated higher-k dielectric with Replacement Metal Gate (Metal-Gate-Last) transistors that achieved 200x-1000x reduction in gate leakage relative to leading-edge logic devices in the industry with HfO2 high-k gate dielectric. To address the process control and scalability of the replacement metal gate for nano-scale devices, imec achieved tight electrical distribution down to 20nm gate length through detailed process optimizations. By providing fundamental insights into work-function influences due to metal intermixing in aggressively-scaled metal gates, imec’s … Read More → "Imec Shows New Paths to Scaling Advanced Gatestack and Channel Material for Next-generation CMOS at the VLSI 2012 Symposium"