TOKYO, Japan, June 21, 2012 — Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced the availability of three new super-junction metal-oxide-semiconductor field-effect-transistors (Super Junction MOSFETs) (Note 1) featuring figure of merit: on-state resistance x gate change in a 600 V power semiconductor device suitable for high-speed motor drives, DC-DC converters, and DC-AC inverter applications. This ultra low on-state resistance and low gate charge combination benchmark, combined with the fast body diode feature, allow the new RJL60S5DPP, RJL60S5DPK and RJL60S5DPE devices to contribute to improved power efficiency in home appliance motor drives, such as … Read More → "Renesas Electronics Introduces New Super Junction MOSFETs with Ultra Low On-State Resistance, Low Gate Charge and Fast Body Diodes for Improved Reverse Recovery Performance"

The VLSI Solution VS23S010 is an easy to use static RAM device. With one megabit capacity it is the largest capacity SPI RAM on the market. The memory can be accessed via a standard SPI compatible serial bus (1, 2 and 4-bit modes), or via an 8080-type 8-bit parallel bus similar to nand flash devices. The main applications of the device are microcontroller RAM extension and audio buffer for internet and personal streaming.

The VLSI Solution VS23S010 is an easy to use SPI SRAM device with the largest capacity on the market. The memory can be accessed … Read More → "VS23S010 – One Mbit Versatile SPI / 8-Bit Parallel Bus SRAM"