December 10, 2012 (San Francisco, USA) – Imec announces that it has developed an ultra-thin hybrid floating gate cell with demonstrated functionality. The results, which are presented at this week’s 2012 IEEE International Electron Devices Meeting (IEDM, San Francisco, USA, December 10-12, 2012), are an important step for further scaling of NAND Flash technology towards the 10nm half pitch node and beyond.

The increasing need for high density flash memory has driven the scaling of the technology down to the 19nm half pitch node which is currently in production. However, from such dimensions on, the Control Gate (CG) can no longer … Read More → "Imec presents an ultra-thin hybrid floating gate cell at IEDM2012"

LEUVEN, Belgium and MOUNTAIN VIEW, Calif. – December 12, 2012 – Imec, the Belgian nanoelectronics research center, and Synopsys, Inc. (Nasdaq:SNPS), a global leader accelerating innovation in the design, verification and manufacturing of chips and systems, today announced that they have expanded their collaboration in the field of Technology Computer Aided Design (TCAD) to next-generation FinFET technology at 10-nm. The collaboration builds on extensive work done at 14-nm and several other process geometries, and will calibrate Synopsys’ Sentaurus™ TCAD models to support the next-generation FinFET devices. The collaboration will include 3-D modeling of new device architectures and materials that will enable … Read More → "Imec and Synopsys Expand FinFET Collaboration to 10 Nanometer Geometry"