RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier
RFMD’s new RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two-way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. This input-matched GaN transistor is packaged in an air cavity ceramic package for excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that … Read More → "RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier"