Leuven (Belgium)—Dec. 14, 2015—At last week’s IEEE International Electron Devices Meeting 2015, world-leading nano-electronics research center imec presented three novel aluminum gallium nitride (AlGaN)/ gallium nitride (GaN) stacks featuring optimized low dispersion buffer designs. Moreover, imec optimized the epitaxial p-GaN growth process on 200mm silicon wafers, achieving e-mode devices featuring beyond state-of-the-art high threshold voltage (Vt) and high drive current (Id). 

To achieve a good, current-collapse-free device operation in AlGaN/GaN-on-Silicon (Si) devices, dispersion must be kept to a minimum. Trapped charges … Read More → "Imec Advances 200mm GaN-on-Si Technology Closer to Manufacturing"

WASHINGTON – International Electron Devices Meeting 2015 (IEDM) – Dec. 9, 2015—At this week’s IEEE IEDM conference, nano-electronics research center imec demonstrates record enhancement of novel InGaAs Gate-All-Around (GAA) channel devices integrated on 300mm Silicon and explores emerging tunnel devices based on optimization of the same III-V compound semiconductor. 

III-V-on-Si GAA devices with a record peak transconductance at 0.5V has been achieved by optimizing both the channel epitaxy quality and the gate-channel passivation. In search of device technologies beyond FinFETs and GAA-nanowires for sub-0.5V operations, imec investigates InGaAs Tunnel-FET (TFETs). homo-junction III-V TFETs achieving a record … Read More → "Imec Boosts Performance of Beyond-Silicon Devices"