Element Six’s GaN-on-Diamond Wafers Proven by Raytheon to provide 3x improvement in power density vs GaN-on-SiC for RF Devices
14 May, 2014—Element Six, the world leader in synthetic diamond supermaterials and a member of the De Beers Group of Companies, today announced that its Gallium Nitride (GaN)-on-Diamond wafers have been proven by Raytheon Company to significantly outperform industry standard Gallium Nitride-on-Silicon Carbide (GaN-on-SiC) in RF devices—reducing thermal resistance, increasing RF power density, and preserving RF functionality.
In high electron mobility transistor (HEMT) devices, Raytheon achieved a 3 times improvement in GaN-on-Diamond’s RF areal power … Read More → "Element Six’s GaN-on-Diamond Wafers Proven by Raytheon to provide 3x improvement in power density vs GaN-on-SiC for RF Devices"