Infineon launches world’s first industrial gallium nitride (GaN) transistor product family with integrated Schottky diode
Munich, Germany – 14 April 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN™ Transistors G5 with integrated Schottky diode increases the performance of power systems by reducing undesired deadtime losses, thereby further increasing overall system efficiency. Additionally, the integrated solution simplifies the power stage design and reduces BOM cost.
In hard-switching applications, GaN-based topologies may incur higher power losses due to the larger effective body diode voltage (V SD) of GaN devices. This gets … Read More → "Infineon launches world’s first industrial gallium nitride (GaN) transistor product family with integrated Schottky diode"

