Phoenix – September 9, 2025: Each year, Nexperia adds about 800 new product types to its range. In 2024, more than 70 new parts for analogue and power management applications alone were released. To support Nexperia’s product expansion, Newark has expanded its SKU range in line with the growing portfolio to better serve engineers worldwide.

Nexperia is renowned for its quality and reliability in discrete components, power, and logic ICs and has made a substantial investment in manufacturing. This includes a $200 million commitment to SiC and GaN technology at its Hamburg, Germany facility. The investment is now yielding results, with a rapidly growing portfolio that includes power MOSFETs, wide bandgap semiconductors, IGBTs, as well as analogue and power management ICs.

These manufacturing advancements and new product introductions highlight Nexperia’s commitment to advancing production capabilities and meeting future demands, and Newark’s expansion of Nexperia power products in stock reflects the desire to meet demand.

Jose Lok, Global Product Category Director, Passives and Semiconductors at Newark, said,” The importance of leading-edge power products cannot be overstated, and Nexperia provides some of the best—whether they are targeted for automotive, industrial or portable or even wearable applications. We share their goal of ensuring developers can access the exact components they need, when they need them. With comprehensive Nexperia inventory available across the Americas, EMEA and APAC, we are ready to support engineers worldwide.”

Included in the new series available from Newark are:

• Power MOSFETs – Automotive-qualified power MOSFETs, small signal MOSFETs, and application specific MOSFETs from 20V to 100V. These devices provide excellent switching performance and robustness in copper-clip packages (LFPAK, CCPAK) and micro lead package (MLPAK) variants.
• 650V IGBT discretes in H-series (high speed) and M-series (motor drive) options deliver ruggedness, high reliability and enhanced inverter power density for medium and high voltage industrial applications.
• SiC diodes offer temperature-independent capacitive turn-off and zero recovery switching behaviour, combined with an outstanding figure-of-merit (Qc x VF).
• SiC MOSFETs with excellent RDSon temperature stability, fast switching speed, and high short-circuit ruggedness for high-power and high-voltage industrial applications.
• Low voltage e-mode GaN FETs, 650 V e-mode GaN FETs, 40 V bi-directional GaN FETs and 650 V cascode GaN FETs designed for enhanced power density through reduced conduction and switching losses in low- or high-power conversion applications
• Power rectifiers that deliver power density while minimising reverse recovery time and loss

Kinga Czutro, Senior Corporate Account Manager, Distribution at Nexperia said, ”We’re proud to see our power products recognized for their performance across such a wide range of applications. Newark’s dedication to availability and support is a key part of helping engineers bring their designs to life, quickly and reliably. This partnership clearly reflects that shared vision.

The new range of power products from Nexperia is now available and shipping from Newark in North, Farnell in EMEA and America and element14 in APAC.